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HIGH TEMPERATURE CAPACITORS FOR VOLTAGE MULTIPLIERS

SINGH, VINIT
http://rave.ohiolink.edu/etdc/view?acc_num=ucin1085685724

Abstract Details

2004, MS, University of Cincinnati, Engineering : Electrical Engineering.
This thesis presents the research into dielectrics for thin film capacitors for high voltage, high temperature integrated circuits. For such applications, the dielectric must satisfy a number of critical thermal, environmental and electrical requirements. The attributes required include thermal stability, high permittivity, low leakage currents, high breakdown voltages, low equivalent series resistance (ESR) and high chemical stability. Aluminum Nitride (AlN), with a high dielectric constant (~8.9) and high bandgap energy (6.2 eV) has the basic intrinsic properties for such applications Al-on glass substrates were formed by thermal evaporation of aluminum on a clean glass substrate. AlN thin films were deposited on the Al-on-glass substrate by RF magnetron sputtering. Finally, the top electrode of the capacitor was formed by the thermal evaporation of a thin film of Aluminum through a shadow mask to give specific shape to the capacitors of the Metal-Insulator-Metal (MIM) format. The capacitors were then electrically characterized at temperatures ranging from 200C-3000C. Dissipation factors less than 0.005 were obtained for a majority of the capacitor structures. The ESR was calculated from the DF and the frequency. The capacitors displayed breakdown fields > 3 MV/cm and had leakage current density < 0.025 A/m2 at 200 volts. Resistivities were calculated from the I-V measurements to be 10e+14 ohm-cm at room temperature, and remained as high as almost 10e+13 ohm-cm at 3000C (at 200 volts). The mask for the capacitor ladder for a Cockroft-Walton type voltage multiplier was designed and fabricated; which was used to fabricate an 8-capacitor ladder using AlN capacitors capable of charging up to over 1000 volts.
Dr. Peter Kosel (Advisor)
117 p.
capacitors; aluminum nitride; high temperature; voltage multipliers

Recommended Citations

Citations

  • SINGH, V. (2004). HIGH TEMPERATURE CAPACITORS FOR VOLTAGE MULTIPLIERS [Master's thesis, University of Cincinnati]. OhioLINK Electronic Theses and Dissertations Center. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1085685724

    APA Style (7th edition)

  • SINGH, VINIT. HIGH TEMPERATURE CAPACITORS FOR VOLTAGE MULTIPLIERS. 2004. University of Cincinnati, Master's thesis. OhioLINK Electronic Theses and Dissertations Center, http://rave.ohiolink.edu/etdc/view?acc_num=ucin1085685724.

    MLA Style (8th edition)

  • SINGH, VINIT. "HIGH TEMPERATURE CAPACITORS FOR VOLTAGE MULTIPLIERS." Master's thesis, University of Cincinnati, 2004. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1085685724

    Chicago Manual of Style (17th edition)

ucin1085685724
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© 2004, all rights reserved.
This open access ETD is published by University of Cincinnati and OhioLINK.