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Effect Of Interfacial Top Electrode Layer On The Performance Of Niobium Oxide Based Resistive Random Access Memory

Manjunath, Vishal Jain
http://rave.ohiolink.edu/etdc/view?acc_num=ucin1552657250617694

Abstract Details

2019, MS, University of Cincinnati, Engineering and Applied Science: Electrical Engineering.
Resistive RAM has high scalability with fast switching speed, low operating voltage making it one of the promising emerging nonvolatile memory technologies. Interfacial layer between the electrode and metal-oxide interface in a Resistive RAM (ReRAM) could either enhance or deteriorate the switching performance of the device. In this study, we investigate the role of Aluminum (Al) as an interfacial layer under the top electrode (TE) layer in a Niobium Oxide (Nb2O5) based ReRAM. We compare the Current-Voltage (I-V), Capacitance-Voltage (C-V) characteristics and endurance effects of the Nb2O5 based ReRAM with an Al interfacial layer below the Tungsten (W) TE and a control sample without the Al interfacial layer to contrast the performance of each type. Additionally, we connect the tested device behavior with the enthalpy, entropy, and Gibb’s free energy of Aluminum and Tungsten which are the metal electrode materials to illustrate that aluminum is an inefficient interfacial layer in the niobium oxide ReRAM.
Rashmi Jha, Ph.D. (Committee Chair)
Wen-Ben Jone, Ph.D. (Committee Member)
Carla Purdy, Ph.D. (Committee Member)
63 p.
Electrical Engineering
Resistive Random Access Memory; Aluminum; Interfacial layer; Top Electrode; Niobium oxide; Gibbs Free Energy

Recommended Citations

Citations

  • Manjunath, V. J. (2019). Effect Of Interfacial Top Electrode Layer On The Performance Of Niobium Oxide Based Resistive Random Access Memory [Master's thesis, University of Cincinnati]. OhioLINK Electronic Theses and Dissertations Center. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1552657250617694

    APA Style (7th edition)

  • Manjunath, Vishal Jain. Effect Of Interfacial Top Electrode Layer On The Performance Of Niobium Oxide Based Resistive Random Access Memory. 2019. University of Cincinnati, Master's thesis. OhioLINK Electronic Theses and Dissertations Center, http://rave.ohiolink.edu/etdc/view?acc_num=ucin1552657250617694.

    MLA Style (8th edition)

  • Manjunath, Vishal Jain. "Effect Of Interfacial Top Electrode Layer On The Performance Of Niobium Oxide Based Resistive Random Access Memory." Master's thesis, University of Cincinnati, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1552657250617694

    Chicago Manual of Style (17th edition)

ucin1552657250617694
361
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This open access ETD is published by University of Cincinnati and OhioLINK.